MMBT3640

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 50mA

Collector Emitter Saturation Voltage :

600mV

Contact Plating :

Tin

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 300mV

Collector Base Voltage (VCBO) :

-12V

Gain Bandwidth Product :

500MHz

Published :

2017

hFE Min :

30

Collector Emitter Voltage (VCEO) :

12V

Max Collector Current :

200mA

Lifecycle Status :

LIFETIME (Last Updated: 1 week ago)

Length :

2.92mm

Frequency :

500MHz

Height :

930μm

Additional Feature :

HIGH SPEED SATURATED SWITCHING

Current - Collector Cutoff (Max) :

10nA

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Base Part Number :

MMBT3640

Current Rating :

-200mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Breakdown Voltage :

12V

Number of Elements :

1

Power Dissipation :

225mW

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

-4V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Terminations :

3

Weight :

30mg

Width :

1.3mm

Lead Free :

Lead Free

Turn On Time-Max (ton) :

25ns

Transistor Element Material :

SILICON

Radiation Hardening :

No

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

225mW

Transition Frequency :

500MHz

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

12V

Factory Lead Time :

39 Weeks

Voltage - Rated DC :

-12V

Transistor Type :

PNP

REACH SVHC :

No SVHC

ECCN Code :

EAR99