MMBT3416LT3G
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- Mfr.Part #
- MMBT3416LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.1A SOT23-3
- Stock
- 40,029
- In Stock ：
- 40,029
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 75MHz
- Frequency :
- 75MHz
- Collector Base Voltage (VCBO) :
- 4V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 2mA 4.5V
- Collector Emitter Voltage (VCEO) :
- 40V
- Base Part Number :
- MMBT3416
- Current Rating :
- 100mA
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- 300mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Power Dissipation :
- 300mW
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Max Collector Current :
- 100mA
- hFE Min :
- 75
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Lead Free :
- Lead Free
- Published :
- 2008
- Max Power Dissipation :
- 225mW
- Element Configuration :
- Single
- Length :
- 3.04mm
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 3mA, 50mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 25V
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 2.64mm
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Height :
- 1.11mm
- Emitter Base Voltage (VEBO) :
- 4V
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- Pin Count :
- 3
- Datasheets
- MMBT3416LT3G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3416LT3G Overview
This device has a DC current gain of 75 @ 2mA 4.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 3mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 100mA volts is possible.
MMBT3416LT3G Features
the DC current gain for this device is 75 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
MMBT3416LT3G Applications
There are a lot of ON Semiconductor
MMBT3416LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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