MMBT3416LT3
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- Mfr.Part #
- MMBT3416LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN GP 25V 100MA SOT-23
- Stock
- 2,655
- In Stock ：
- 2,655
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 2mA 4.5V
- Factory Lead Time :
- 2 Weeks
- Frequency :
- 75MHz
- Length :
- 3.04mm
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 4V
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 225mW
- Height :
- 1.11mm
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- Published :
- 2008
- Emitter Base Voltage (VEBO) :
- 4V
- Mounting Type :
- Surface Mount
- Width :
- 2.64mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 75MHz
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- hFE Min :
- 75
- Number of Pins :
- 3
- Voltage - Rated DC :
- 25V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 300mV
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Current Rating :
- 100mA
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 3mA, 50mA
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Base Part Number :
- MMBT3416
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Datasheets
- MMBT3416LT3
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3416LT3G Overview
This device has a DC current gain of 75 @ 2mA 4.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 3mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 100mA volts is possible.
MMBT3416LT3G Features
the DC current gain for this device is 75 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
MMBT3416LT3G Applications
There are a lot of ON Semiconductor
MMBT3416LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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