MMBT2907

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Mfr.Part #
MMBT2907
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 40V 0.8A SOT23-3
Stock
21,436
In Stock :
21,436

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Published :
2006
Current - Collector Cutoff (Max) :
20nA ICBO
Collector Emitter Voltage (VCEO) :
1.6V
Weight :
1.437803g
Collector Emitter Breakdown Voltage :
60V
Operating Temperature :
-55°C~150°C TJ
Transition Frequency :
200MHz
Terminal Position :
Dual
Package / Case :
TO-236-3, SC-59, SOT-23-3
Frequency :
200MHz
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Max Collector Current :
600mA
Turn On Time-Max (ton) :
35ns
Mount :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
hFE Min :
100
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Element Configuration :
Single
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power - Max :
250mW
Factory Lead Time :
10 Weeks
Turn Off Time-Max (toff) :
285ns
Emitter Base Voltage (VEBO) :
-5V
Transistor Element Material :
SILICON
Transistor Type :
PNP
Polarity/Channel Type :
PNP
Max Power Dissipation :
350mW
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
JESD-30 Code :
R-PDSO-G3
Current - Collector (Ic) (Max) :
600mA
Continuous Collector Current :
-600mA
Datasheets
MMBT2907
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT2907 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Mounting Type:Surface Mount, MMBT2907 pinout, MMBT2907 datasheet PDF, MMBT2907 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT2907 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT2907


PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT2907A-G Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Maintaining the continuous collector voltage at -600mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.200MHz is present in the transition frequency.Maximum collector currents can be below 600mA volts.

MMBT2907A-G Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz


MMBT2907A-G Applications


There are a lot of Comchip Technology
MMBT2907A-G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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