MMBT2484LT3G
- Mfr.Part #
- MMBT2484LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.1A SOT23-3
- Stock
- 29,373
- In Stock :
- 29,373
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Terminal Position :
- Dual
- Max Power Dissipation :
- 225mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MMBT2484
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Published :
- 2006
- JESD-609 Code :
- e3
- hFE Min :
- 250
- Collector Emitter Saturation Voltage :
- 350mV
- Collector Emitter Voltage (VCEO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 100µA, 1mA
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Power - Max :
- 225mW
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 1mA 5V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Factory Lead Time :
- 2 Weeks
- Gain Bandwidth Product :
- 650MHz
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation :
- 300mW
- Datasheets
- MMBT2484LT3G

NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2484LT3G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 1mA 5V DC current gain.As it features a collector emitter saturation voltage of 350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 100mA volts.
MMBT2484LT3G Features
the DC current gain for this device is 250 @ 1mA 5V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
MMBT2484LT3G Applications
There are a lot of ON Semiconductor
MMBT2484LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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