MMBT2484LT3G

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Mfr.Part #
MMBT2484LT3G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 60V 0.1A SOT23-3
Stock
29,373
In Stock :
29,373

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
60V
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
60V
Number of Pins :
3
Current - Collector Cutoff (Max) :
10nA ICBO
Terminal Position :
Dual
Max Power Dissipation :
225mW
Package / Case :
TO-236-3, SC-59, SOT-23-3
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Surface Mount :
yes
Peak Reflow Temperature (Cel) :
260
Base Part Number :
MMBT2484
Qualification Status :
Not Qualified
Emitter Base Voltage (VEBO) :
6V
Number of Terminations :
3
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin (Sn)
Published :
2006
JESD-609 Code :
e3
hFE Min :
250
Collector Emitter Saturation Voltage :
350mV
Collector Emitter Voltage (VCEO) :
60V
Vce Saturation (Max) @ Ib, Ic :
350mV @ 100µA, 1mA
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
40
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN
Element Configuration :
Single
Power - Max :
225mW
Pin Count :
3
Max Collector Current :
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 1mA 5V
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
NPN
Pbfree Code :
yes
Factory Lead Time :
2 Weeks
Gain Bandwidth Product :
650MHz
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Power Dissipation :
300mW
Datasheets
MMBT2484LT3G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT2484LT3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Base Part Number:MMBT2484, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, MMBT2484LT3G pinout, MMBT2484LT3G datasheet PDF, MMBT2484LT3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT2484LT3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT2484LT3G


NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT2484LT3G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 1mA 5V DC current gain.As it features a collector emitter saturation voltage of 350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 100mA volts.

MMBT2484LT3G Features


the DC current gain for this device is 250 @ 1mA 5V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 100μA, 1mA
the emitter base voltage is kept at 6V


MMBT2484LT3G Applications


There are a lot of ON Semiconductor
MMBT2484LT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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