MMBT2369LT3G

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Mfr.Part #
MMBT2369LT3G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 15V 0.2A SOT23-3
Stock
14,626
In Stock :
14,626

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
15V
Height :
1.11mm
Surface Mount :
yes
Length :
3.04mm
Width :
2.64mm
Collector Base Voltage (VCBO) :
40V
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
40
Base Part Number :
MMBT2369
hFE Min :
40
Transistor Type :
NPN
Max Frequency :
1MHz
Emitter Base Voltage (VEBO) :
4.5V
Pin Count :
3
Element Configuration :
Single
Current - Collector Cutoff (Max) :
400nA
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Power Dissipation :
300mW
Max Collector Current :
200mA
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 10mA 350mV
Collector Emitter Saturation Voltage :
250mV
Factory Lead Time :
2 Weeks
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Vce Saturation (Max) @ Ib, Ic :
250mV @ 1mA, 10mA
Terminal Position :
Dual
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
15V
Polarity/Channel Type :
NPN
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Max Power Dissipation :
225mW
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
Number of Terminations :
3
Published :
2008
Datasheets
MMBT2369LT3G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT2369LT3G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Base Part Number:MMBT2369, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, MMBT2369LT3G pinout, MMBT2369LT3G datasheet PDF, MMBT2369LT3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT2369LT3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT2369LT3G


NPN -55°C~150°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT2369LT3G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 10mA 350mV.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 1mA, 10mA.The emitter base voltage can be kept at 4.5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.

MMBT2369LT3G Features


the DC current gain for this device is 40 @ 10mA 350mV
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V


MMBT2369LT3G Applications


There are a lot of ON Semiconductor
MMBT2369LT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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