MMBT2222LT3G

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Mfr.Part #
MMBT2222LT3G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 30V 0.6A SOT23-3
Stock
17,755
In Stock :
17,755

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
300mW
Number of Elements :
1
Transistor Type :
NPN
Peak Reflow Temperature (Cel) :
260
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Configuration :
Single
Current - Collector Cutoff (Max) :
10nA ICBO
Packaging :
Tape and Reel (TR)
JESD-30 Code :
R-PDSO-G3
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Turn On Time-Max (ton) :
35ns
Terminal Finish :
MATTE TIN
Pbfree Code :
yes
Polarity/Channel Type :
NPN
Terminal Position :
Dual
Qualification Status :
COMMERCIAL
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Turn Off Time-Max (toff) :
285ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transition Frequency :
250MHz
Pin Count :
3
Transistor Element Material :
SILICON
Current - Collector (Ic) (Max) :
600mA
Surface Mount :
yes
JESD-609 Code :
e3
Voltage - Collector Emitter Breakdown (Max) :
30V
Operating Temperature :
-55°C~150°C TJ
Frequency - Transition :
250MHz
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Application :
SWITCHING
Datasheets
MMBT2222LT3G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT2222LT3G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, MMBT2222LT3G pinout, MMBT2222LT3G datasheet PDF, MMBT2222LT3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT2222LT3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT2222LT3G


NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT2222LT3G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The part has a transition frequency of 250MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).

MMBT2222LT3G Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 250MHz


MMBT2222LT3G Applications


There are a lot of Rochester Electronics, LLC
MMBT2222LT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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