MMBT2222LT1

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Mfr.Part #
MMBT2222LT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 30V 600MA SOT23
Stock
426,928
In Stock :
426,928

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Surface Mount :
yes
Emitter Base Voltage (VEBO) :
5V
Max Breakdown Voltage :
30V
Weight :
4.535924g
Number of Pins :
3
Terminal Position :
Dual
Package / Case :
TO-236-3, SC-59, SOT-23-3
ECCN Code :
EAR99
Max Power Dissipation :
225mW
Element Configuration :
Single
Termination :
SMD/SMT
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Saturation Voltage :
1.6V
Base Part Number :
MMBT2222
Lead Free :
Lead Free
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
30V
Packaging :
Tape and Reel (TR)
Transistor Type :
NPN
Transistor Element Material :
SILICON
Frequency :
250MHz
Number of Elements :
1
Turn Off Time-Max (toff) :
285ns
Current Rating :
600mA
Terminal Form :
Gull wing
Voltage - Rated DC :
30V
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Breakdown Voltage :
30V
Max Collector Current :
600mA
Contact Plating :
Tin
hFE Min :
100
Collector Base Voltage (VCBO) :
60V
Transition Frequency :
250MHz
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Polarity/Channel Type :
NPN
Factory Lead Time :
8 Weeks
Mounting Type :
Surface Mount
Width :
2.64mm
Number of Terminations :
3
Gain Bandwidth Product :
250MHz
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Power Dissipation :
300mW
Published :
2004
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Length :
3.04mm
Peak Reflow Temperature (Cel) :
260
Current - Collector Cutoff (Max) :
10nA ICBO
Height :
1.11mm
Datasheets
MMBT2222LT1
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT2222LT1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:MMBT2222, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, MMBT2222LT1 pinout, MMBT2222LT1 datasheet PDF, MMBT2222LT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT2222LT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT2222LT1


NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT2222LT1G Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 600mA.In this part, there is a transition frequency of 250MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 600mA volts.

MMBT2222LT1G Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 250MHz


MMBT2222LT1G Applications


There are a lot of ON Semiconductor
MMBT2222LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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