MMBT2222AT

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

350mW

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max (Abs) :

0.35W

Qualification Status :

Not Qualified

Package / Case :

TO-236-3, SC-59, SOT-23-3

Turn Off Time-Max (toff) :

285ns

Turn On Time-Max (ton) :

35ns

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

10

Published :

2004

Voltage - Collector Emitter Breakdown (Max) :

40V

Pin Count :

3

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Transition Frequency :

300MHz

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G3

Surface Mount :

yes

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

600mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Frequency - Transition :

300MHz

Number of Elements :

1

Transistor Type :

NPN

Base Part Number :

MMBT2222A

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Configuration :

Single