MMBT2222ALT3G
- Mfr.Part #
- MMBT2222ALT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 25,274
- In Stock :
- 25,274
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- REACH SVHC :
- No SVHC
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Max Operating Temperature :
- 150°C
- Collector Emitter Voltage (VCEO) :
- 40V
- Element Configuration :
- Single
- Polarity :
- NPN
- Factory Lead Time :
- 10 Weeks
- Collector Base Voltage (VCBO) :
- 75V
- Voltage - Rated DC :
- 40V
- Min Operating Temperature :
- -55°C
- Collector Emitter Saturation Voltage :
- 1V
- Lead Free :
- Lead Free
- Current Rating :
- 600mA
- Max Frequency :
- 100MHz
- Frequency :
- 300MHz
- Gain Bandwidth Product :
- 300MHz
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.04mm
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 300mW
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Base Part Number :
- MMBT2222A
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Max Collector Current :
- 600mA
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Width :
- 1.4mm
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 40V
- Frequency - Transition :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Current - Collector (Ic) (Max) :
- 600mA
- Max Power Dissipation :
- 225mW
- Power - Max :
- 300mW
- Height :
- 1.01mm
- Contact Plating :
- Tin
- hFE Min :
- 35
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- MMBT2222ALT3G

NPN -55°C~150°C TJ 10nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2222ALT3G transistor is a bipolar transistor that is controlled through current. In comparison to Field effect transistors, MMBT2222ALT3G bipolar transistors have a slower switching speed and the input impedance is low and power consumption is large. On Semiconductor MMBT2222ALT3G is widely employed in television, broadcasting communications, radar, computers, automatic control devices electronic instruments, household appliances, and many other areas.
MMBT2222ALT3G Features
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space
Pb-Free Package is Available
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
MMBT2222ALT3G Applications
Television
Broadcasting communications
Radar
Computers
Household appliances
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