MD2001FX
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- Mfr.Part #
- MD2001FX
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- TRANS NPN 700V 12A ISOWATT-218FX
- Stock
- 180
- In Stock ：
- 180
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 9V
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 58W
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4.5 @ 6A 5V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 200μA
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Base Part Number :
- MD2001
- Contact Plating :
- Tin
- Package / Case :
- ISOWATT218FX
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1.8V
- Max Collector Current :
- 12A
- Gain Bandwidth Product :
- 64 kHz
- Pin Count :
- 3
- Mount :
- Through Hole
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Case Connection :
- Isolated
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Max Power Dissipation :
- 58W
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 9V
- Factory Lead Time :
- 8 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1.5A, 6A
- Collector Emitter Breakdown Voltage :
- 700V
- REACH SVHC :
- No SVHC
- hFE Min :
- 4.5
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 700V
- Datasheets
- MD2001FX
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole
MD2001FX Overview
In this device, the DC current gain is 4.5 @ 6A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1.5A, 6A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.
MD2001FX Features
the DC current gain for this device is 4.5 @ 6A 5V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1.5A, 6A
the emitter base voltage is kept at 9V
MD2001FX Applications
There are a lot of STMicroelectronics
MD2001FX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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