MD2009DFP

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Mfr.Part #
MD2009DFP
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN 700V 10A TO220FP
Stock
860
In Stock :
860

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Base Part Number :
MD2009
hFE Min :
5
Transistor Type :
NPN
Lead Free :
Lead Free
Polarity/Channel Type :
NPN
Package / Case :
TO-220-3 Full Pack
Power Dissipation :
40W
Emitter Base Voltage (VEBO) :
7V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
700V
Case Connection :
Isolated
Transistor Element Material :
SILICON
Number of Pins :
3
Current - Collector Cutoff (Max) :
200μA
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Matte Tin (Sn) - annealed
Additional Feature :
UL RECOGNIZED
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 5.5A 5V
Mount :
Through Hole
Configuration :
SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code :
TO-220AB
Packaging :
Tube
Transistor Application :
SWITCHING
Max Collector Current :
10A
Terminal Position :
Single
Number of Terminations :
3
Operating Temperature :
150°C TJ
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Pin Count :
3
Pbfree Code :
yes
Qualification Status :
Not Qualified
Collector Emitter Voltage (VCEO) :
700V
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 1.4A, 5.5A
Reach Compliance Code :
not_compliant
Max Power Dissipation :
40W
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics MD2009DFP from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MD2009, Package / Case:TO-220-3 Full Pack, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, MD2009DFP pinout, MD2009DFP datasheet PDF, MD2009DFP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics MD2009DFP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics MD2009DFP


NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole

MD2009DFP Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 5.5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.8V @ 1.4A, 5.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 10A volts at its maximum.

MD2009DFP Features


the DC current gain for this device is 5 @ 5.5A 5V
the vce saturation(Max) is 2.8V @ 1.4A, 5.5A
the emitter base voltage is kept at 7V


MD2009DFP Applications


There are a lot of STMicroelectronics
MD2009DFP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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