LM5111-3M
- Mfr.Part #
- LM5111-3M
- Manufacturer
- National Semiconductor
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Datasheet
- Download
- Description
- BUFFER/INVERTER BASED PERIPHERAL
- Stock
- 1,369
- In Stock :
- 1,369
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- Manufacturer :
- National Semiconductor
- Product Category :
- Gate Drivers
- RoHS Status :
- Non-RoHS Compliant
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Max Supply Current :
- 2mA
- Pbfree Code :
- No
- Rise Time :
- 25ns
- Propagation Delay :
- 40 ns
- Output Current :
- 5A
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e0
- Lead Free :
- Contains Lead
- Max Output Current :
- 5A
- Terminal Position :
- Dual
- Number of Pins :
- 8
- Base Part Number :
- LM5111
- Number of Functions :
- 1
- ECCN Code :
- EAR99
- Channel Type :
- Independent
- Rise / Fall Time (Typ) :
- 14ns 12ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -40°C~125°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Fall Time (Typ) :
- 25 ns
- Height :
- 860μm
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pin Count :
- 8
- Length :
- 3mm
- Current - Peak Output (Source, Sink) :
- 3A 5A
- Width :
- 3mm
- Interface IC Type :
- BUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Input Type :
- Inverting, Non-Inverting
- Built-in Protections :
- Over Voltage
- Terminal Pitch :
- 0.65mm
- Output Peak Current Limit-Nom :
- 5A
- Driven Configuration :
- Low-Side
- Voltage - Supply :
- 3.5V~14V
- Supply Voltage :
- 12V
- Turn On Delay Time :
- 40 ns
- Gate Type :
- N-Channel MOSFET
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Number of Terminations :
- 8
- Nominal Supply Current :
- 2mA
- Number of Drivers :
- 2
- Packaging :
- Tape and Reel (TR)
- Logic Voltage - VIL, VIH :
- 0.8V 2.2V
- Terminal Form :
- Gull wing
- Datasheets
- LM5111-3M

Gate Drivers National Semiconductor LM5111-3M Overview
The LM5111-3M from National Semiconductor stands out in the field of Gate Drivers, providing robust and reliable BUFFER/INVERTER BASED PERIPHERAL solutions. This component is engineered to enhance the performance of gate driving applications, ensuring efficient and high-speed switching. Its design caters specifically to those who require a mix of high efficiency and durability in their electronic circuit designs. The dual-output configuration of the LM5111-3M allows for flexibility in both inverting and non-inverting applications, making it a versatile choice for a wide range of industrial needs. With its advanced technology and National Semiconductor's commitment to quality, the Gate Drivers National Semiconductor LM5111-3M is an essential component for developing high-performance electronic systems.
LM5111-3M Features
The LM5111-3M includes several key features that make it ideal for a broad array of power management applications. It offers dual outputs that can be configured as either push-pull or inverting, which is critical for driving MOSFETs and IGBTs efficiently. Its low propagation delay ensures rapid response times, while the high peak output current capability facilitates the handling of high-capacity loads. Furthermore, the LM5111-3M's wide supply voltage range accommodates various levels of power requirements, adding to its adaptability across different technologies and system designs.
LM5111-3M Applications
- Switch Mode Power Supplies (SMPS): The LM5111-3M is utilized to drive MOSFETs in SMPS circuits, enabling efficient switching and power conversion.
- Motor Control Systems: Its ability to provide high peak currents makes it suitable for controlling high-power motors, ensuring precise operation in industrial and automotive applications.
- Solar Inverters: In solar inverters, the LM5111-3M helps in managing power flow efficiently, converting DC to AC while maximizing solar energy utilization.
- LED Lighting: This driver is used to modulate the power supplied to LED arrays, facilitating energy-efficient and consistent illumination.
- Electric Vehicle (EV) Chargers: It plays a critical role in EV chargers by managing the gate driving of power components, which enhances the efficiency and reliability of charging stations.
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