1N3070

Manufacturer :

National Semiconductor

Product Category :

Diodes - Rectifiers - Single

Contact Plating :

Tin

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Lead Free :

Lead Free

Capacitance @ Vr, F :

5pF @ 0V 1MHz

Current - Reverse Leakage @ Vr :

100nA @ 175V

Power Dissipation :

500mW

Weight :

80g

Mounting Type :

Through Hole

Operating Temperature - Junction :

175°C Max

Pbfree Code :

yes

Forward Current :

500mA

Peak Non-Repetitive Surge Current :

4A

Base Part Number :

1N3070

Published :

2016

Element Configuration :

Single

Average Rectified Current :

500mA

Number of Pins :

2

Max Operating Temperature :

175°C

Max Reverse Voltage (DC) :

200V

Mount :

Through Hole

Reverse Recovery Time :

50 ns

Diode Type :

Standard

Output Current :

500mA

Min Operating Temperature :

-65°C

Terminal Form :

Wire

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Voltage - Rated DC :

200V

Peak Reverse Current :

100nA

Current Rating :

500mA

Voltage - Forward (Vf) (Max) @ If :

1V @ 100mA

Reverse Voltage :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Number of Terminations :

2

Forward Voltage :

1V

Reach Compliance Code :

Unknown

Max Surge Current :

4A

Qualification Status :

Not Qualified

Capacitance :

5pF

Package / Case :

DO-204AH, DO-35, Axial

Recovery Time :

50 ns

Max Repetitive Reverse Voltage (Vrrm) :

200V

Case Connection :

Isolated

Diode Element Material :

SILICON