LM5100ASD

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Mfr.Part #
LM5100ASD
Manufacturer
National Semiconductor
Package / Case
10-WDFN Exposed Pad
Datasheet
Download
Description
HALF BRIDGE BASED MOSFET DRIVER,
Stock
1,000
In Stock :
1,000

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Manufacturer :
National Semiconductor
Product Category :
Gate Drivers
Input Type :
Non-Inverting
Terminal Pitch :
0.8mm
Output Peak Current Limit-Nom :
3A
Driven Configuration :
Half-Bridge
Channel Type :
Independent
Radiation Hardening :
No
Turn On Time :
0.045 µs
Length :
4mm
Fall Time (Typ) :
260 ns
Terminal Finish :
Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e0
Max Output Current :
3A
Packaging :
Tape and Reel (TR)
Terminal Position :
Dual
Voltage - Supply :
9V~14V
Output Current :
3A
Pbfree Code :
No
Number of Functions :
1
Turn Off Time :
0.045 µs
Package / Case :
10-WDFN Exposed Pad
Gate Type :
N-Channel MOSFET
Turn On Delay Time :
1 ns
Lead Free :
Contains Lead
Current - Peak Output (Source, Sink) :
3A 3A
Logic Voltage - VIL, VIH :
2.3V -
Quiescent Current :
200μA
Nominal Supply Current :
2mA
Base Part Number :
LM5100
Turn-Off Delay Time :
1 ns
Supply Voltage :
12V
Propagation Delay :
20 ns
Rise Time :
430ns
Number of Terminations :
10
High Side Driver :
yes
Width :
4mm
Operating Temperature :
-40°C~125°C TJ
High Side Voltage - Max (Bootstrap) :
118V
Number of Pins :
10
Pin Count :
10
RoHS Status :
Non-RoHS Compliant
Number of Drivers :
2
ECCN Code :
EAR99
Mount :
Surface Mount
Mounting Type :
Surface Mount
Rise / Fall Time (Typ) :
430ns 260ns
Height Seated (Max) :
0.8mm
Datasheets
LM5100ASD
Introducing Gate Drivers National Semiconductor LM5100ASD from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:10-WDFN Exposed Pad, Base Part Number:LM5100, Number of Terminations:10, Operating Temperature:-40°C~125°C TJ, Number of Pins:10, Mounting Type:Surface Mount, LM5100ASD pinout, LM5100ASD datasheet PDF, LM5100ASD amp .Beyond Gate Drivers National Semiconductor LM5100ASD ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

National Semiconductor LM5100ASD


Gate Drivers National Semiconductor LM5100ASD Overview

The LM5100ASD by National Semiconductor stands as a pivotal component in modern power management technology, specifically tailored for HALF BRIDGE BASED MOSFET DRIVER applications. This device is designed to streamline the efficiency and reliability of high-frequency, high-voltage switching applications. With its robust output drive capability and innovative design, the LM5100ASD ensures minimal propagation delays and reduced power dissipation, making it a top choice for engineers looking to enhance system performance while maintaining energy efficiency. The utilization of the Gate Drivers National Semiconductor LM5100ASD in your designs ensures a blend of high performance, reliability, and cutting-edge technology.

LM5100ASD Features

The LM5100ASD MOSFET driver includes several key features that make it ideal for demanding applications. These include high peak output drive current, adaptive dead-time control, and under-voltage lockout protection. Furthermore, it supports both high-side and low-side driving, offers robust temperature stability, and is compatible with a wide range of supply voltages, providing flexibility and reliability in various operating conditions.

LM5100ASD Applications

  • Switch Mode Power Supplies (SMPS): Utilizes the LM5100ASD for driving MOSFETs in both the primary and secondary sides, enhancing efficiency and power density.
  • Motor Controllers: Employs this driver for precise control in applications requiring high-speed and high-voltage operations, critical for electric vehicles and industrial automation.
  • DC-DC Converters: Leverages the fast switching capability of the LM5100ASD to improve response time and efficiency in portable and consumer electronics.
  • Renewable Energy Systems: Applies the device in solar inverters and wind turbine converters to maximize power extraction and conversion efficiency.
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