LM5110-2M
- Mfr.Part #
- LM5110-2M
- Manufacturer
- National Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- BUFFER/INVERTER BASED PERIPHERAL
- Stock
- 1,805
- In Stock :
- 1,805
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- Manufacturer :
- National Semiconductor
- Product Category :
- Gate Drivers
- Fall Time (Typ) :
- 25 ns
- Voltage - Supply :
- 3.5V~14V
- ECCN Code :
- EAR99
- Base Part Number :
- LM5110
- Pin Count :
- 8
- Max Supply Current :
- 2mA
- Number of Functions :
- 2
- Turn On Delay Time :
- 40 ns
- Turn Off Time :
- 0.04 µs
- Driven Configuration :
- Low-Side
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Number of Pins :
- 8
- Number of Outputs :
- 2
- Max Output Current :
- 5A
- Supply Voltage :
- 12V
- Width :
- 3.9mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Turn On Time :
- 0.04 µs
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Temperature :
- -40°C~125°C TJ
- Interface IC Type :
- BUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Logic Voltage - VIL, VIH :
- 0.8V 2.2V
- Mount :
- Surface Mount
- Lead Free :
- Contains Lead
- Output Current :
- 5A
- RoHS Status :
- Non-RoHS Compliant
- JESD-609 Code :
- e0
- Output Peak Current Limit-Nom :
- 5A
- Gate Type :
- N-Channel MOSFET
- Peak Reflow Temperature (Cel) :
- 235
- Channel Type :
- Independent
- Current - Peak Output (Source, Sink) :
- 3A 5A
- Quiescent Current :
- 1mA
- Mounting Type :
- Surface Mount
- Input Type :
- Inverting
- Rise / Fall Time (Typ) :
- 14ns 12ns
- Rise Time :
- 25ns
- Propagation Delay :
- 40 ns
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Number of Terminations :
- 8
- Terminal Form :
- Gull wing
- Height Seated (Max) :
- 1.753mm
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Supply Current :
- 2mA
- Termination :
- SMD/SMT
- Built-in Protections :
- UNDER VOLTAGE
- Datasheets
- LM5110-2M

Gate Drivers National Semiconductor LM5110-2M Overview
Introducing the LM5110-2M by National Semiconductor, a sophisticated buffer/inverter-based peripheral designed specifically for advanced gate driving applications. This product stands out in the field of Gate Drivers due to its robust design and versatile functionality, catering to a wide range of industrial demands. The LM5110-2M ensures high efficiency and reliability for controlling power MOSFETs and IGBTs, which is critical in high-power switching applications. The use of this gate driver can significantly enhance system performance by improving switching speeds and minimizing losses.
LM5110-2M Features
The LM5110-2M incorporates numerous features that make it an essential component for any high-power electronic switching system. It offers dual outputs which can be configured either as two inverters or as one buffer and one inverter, providing flexibility in application design. Its high peak output current, coupled with a wide supply voltage range, allows for use in a diverse array of operating environments. Additionally, the device includes robust protection features, such as under-voltage lockout, which ensures operational stability and longevity.
LM5110-2M Applications
- DC-DC Converters: Utilizes dual output capabilities to efficiently manage power control, enhancing converter reliability and performance.
- Solar Inverters: Applies high peak current and fast switching to optimize power handling in solar energy systems, improving efficiency and energy output.
- Motor Control Systems: Enhances precision in high-frequency motor drives by providing effective gate driving for MOSFETs and IGBTs, crucial for accurate speed and torque control.
- Power Management Systems: Employs robust under-voltage protection to ensure consistent performance and safety in complex power management solutions.
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