KST5551MTF
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- Mfr.Part #
- KST5551MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A SOT23-3
- Stock
- 4,960
- In Stock ：
- 4,960
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency :
- 300MHz
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 350mW
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Base Part Number :
- KST5551
- ECCN Code :
- EAR99
- Length :
- 2.9mm
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Height :
- 970μm
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 600mA
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2003
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Voltage - Rated DC :
- 160V
- Mount :
- Surface Mount
- hFE Min :
- 80
- Max Power Dissipation :
- 350mW
- Max Breakdown Voltage :
- 160V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Width :
- 1.3mm
- Collector Emitter Voltage (VCEO) :
- 160V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 160V
- Emitter Base Voltage (VEBO) :
- 6V
- Current Rating :
- 600mA
- Collector Emitter Saturation Voltage :
- 200mV
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Weight :
- 30mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Collector Base Voltage (VCBO) :
- 180V
- Gain Bandwidth Product :
- 300MHz
- Lead Free :
- Lead Free
- Datasheets
- KST5551MTF
KST5551MTF Documents
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST5551MTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 160V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
KST5551MTF Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
KST5551MTF Applications
There are a lot of ON Semiconductor
KST5551MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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