KST5551MTF
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- Mfr.Part #
- KST5551MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A SOT23-3
- Stock
- 4,960
- In Stock ：
- 4,960
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- KST5551
- Max Collector Current :
- 600mA
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 350mW
- Length :
- 2.9mm
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Published :
- 2003
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.3mm
- Collector Base Voltage (VCBO) :
- 180V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Saturation Voltage :
- 200mV
- Collector Emitter Breakdown Voltage :
- 160V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Power Dissipation :
- 350mW
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 160V
- Lead Free :
- Lead Free
- Frequency :
- 300MHz
- Transition Frequency :
- 100MHz
- Transistor Type :
- NPN
- hFE Min :
- 80
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Number of Elements :
- 1
- Height :
- 970μm
- Current Rating :
- 600mA
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Weight :
- 30mg
- Collector Emitter Voltage (VCEO) :
- 160V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 160V
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 6 Weeks
- Datasheets
- KST5551MTF
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST5551MTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 160V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
KST5551MTF Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
KST5551MTF Applications
There are a lot of ON Semiconductor
KST5551MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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