KST55MTF
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- Mfr.Part #
- KST55MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 3,428
- In Stock ：
- 3,428
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 50MHz
- hFE Min :
- 50
- Collector Base Voltage (VCBO) :
- -60V
- Emitter Base Voltage (VEBO) :
- -4V
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 6 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Frequency :
- 50MHz
- Voltage - Rated DC :
- -60V
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Power Dissipation :
- 350mW
- Collector Emitter Saturation Voltage :
- -250mV
- Current Rating :
- -500mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2008
- Max Operating Temperature :
- 150°C
- Terminal Position :
- Dual
- Transition Frequency :
- 50MHz
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 350mW
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Weight :
- 30mg
- Base Part Number :
- KST55
- Datasheets
- KST55MTF
PNP 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST55MTF Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at -4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
KST55MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KST55MTF Applications
There are a lot of ON Semiconductor
KST55MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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