KST55MTF
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- Mfr.Part #
- KST55MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 3,428
- In Stock ：
- 3,428
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 60V
- Weight :
- 30mg
- Element Configuration :
- Single
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Published :
- 2008
- Max Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Current - Collector Cutoff (Max) :
- 100nA
- Lead Free :
- Lead Free
- Power Dissipation :
- 350mW
- Max Operating Temperature :
- 150°C
- Base Part Number :
- KST55
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 350mW
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- RoHS Status :
- RoHS Compliant
- Frequency :
- 50MHz
- Collector Base Voltage (VCBO) :
- -60V
- Collector Emitter Saturation Voltage :
- -250mV
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- -4V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Current Rating :
- -500mA
- Gain Bandwidth Product :
- 50MHz
- Transition Frequency :
- 50MHz
- Pbfree Code :
- yes
- hFE Min :
- 50
- Datasheets
- KST55MTF
KST55MTF Documents
PNP 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST55MTF Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at -4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
KST55MTF Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
KST55MTF Applications
There are a lot of ON Semiconductor
KST55MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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