KST42MTF
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- Mfr.Part #
- KST42MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23-3
- Stock
- 5,311
- In Stock ：
- 5,311
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 300V
- Terminal Position :
- Dual
- Height :
- 1.2mm
- Voltage - Rated DC :
- 300V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Width :
- 1.3mm
- Current Rating :
- 500mA
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 30mg
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.92mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 50MHz
- Base Part Number :
- KST42
- Transistor Type :
- NPN
- hFE Min :
- 25
- Collector Emitter Breakdown Voltage :
- 300V
- Transition Frequency :
- 50MHz
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Factory Lead Time :
- 27 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Max Junction Temperature (Tj) :
- 150°C
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 50MHz
- Max Breakdown Voltage :
- 300V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 300V
- Max Power Dissipation :
- 350mW
- Element Configuration :
- Single
- Published :
- 2002
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 500mV
- Max Collector Current :
- 500mA
- Power Dissipation :
- 350mW
- Datasheets
- KST42MTF
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST42MTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
KST42MTF Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KST42MTF Applications
There are a lot of ON Semiconductor
KST42MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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