KST43MTF
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- Mfr.Part #
- KST43MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 200V 0.5A SOT23-3
- Stock
- 6
- In Stock ：
- 6
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Max Breakdown Voltage :
- 200V
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.9mm
- Published :
- 2002
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Frequency :
- 50MHz
- Element Configuration :
- Single
- Power Dissipation :
- 350mW
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Max Power Dissipation :
- 350mW
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 200V
- Number of Pins :
- 3
- Transition Frequency :
- 50MHz
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 13 Weeks
- Current Rating :
- 500mA
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 200V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- KST43
- Height :
- 970μm
- Lead Free :
- Lead Free
- Weight :
- 30mg
- Collector Emitter Voltage (VCEO) :
- 200V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.3mm
- hFE Min :
- 40
- Datasheets
- KST43MTF
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST43MTF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 30mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 200V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
KST43MTF Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KST43MTF Applications
There are a lot of ON Semiconductor
KST43MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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