KSH210TF
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- Mfr.Part #
- KSH210TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A TO252-3
- Stock
- 18,000
- In Stock ：
- 18,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 45
- Transition Frequency :
- 65MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Power Dissipation :
- 1.4W
- Length :
- 6.6mm
- Width :
- 6.1mm
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Weight :
- 260.37mg
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Published :
- 2002
- Height :
- 2.3mm
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Voltage - Rated DC :
- -25V
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1.4W
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -1.8V
- Pbfree Code :
- yes
- Current Rating :
- -5A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 25V
- Max Collector Current :
- 5A
- Collector Base Voltage (VCBO) :
- -40V
- JESD-30 Code :
- R-PSSO-G2
- Max Breakdown Voltage :
- 25V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 65MHz
- Base Part Number :
- KSH210
- Emitter Base Voltage (VEBO) :
- -8V
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 25V
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- ECCN Code :
- EAR99
- Frequency :
- 65MHz
- Datasheets
- KSH210TF
PNP 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH210TF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 45 @ 2A 1V.With a collector emitter saturation voltage of -1.8V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1A, 5A.If the emitter base voltage is kept at -8V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.A transition frequency of 65MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 5A volts at its maximum.
KSH210TF Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of -1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
KSH210TF Applications
There are a lot of ON Semiconductor
KSH210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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