KSH210TF
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- Mfr.Part #
- KSH210TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A TO252-3
- Stock
- 18,000
- In Stock ：
- 18,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- hFE Min :
- 45
- Collector Emitter Saturation Voltage :
- -1.8V
- Number of Terminations :
- 2
- Length :
- 6.6mm
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 25V
- Max Power Dissipation :
- 1.4W
- Frequency :
- 65MHz
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Collector Base Voltage (VCBO) :
- -40V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- KSH210
- Number of Pins :
- 3
- Transition Frequency :
- 65MHz
- Width :
- 6.1mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 260.37mg
- Published :
- 2002
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -25V
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Max Breakdown Voltage :
- 25V
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Current Rating :
- -5A
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -8V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 65MHz
- Power Dissipation :
- 1.4W
- Collector Emitter Voltage (VCEO) :
- 25V
- Mounting Type :
- Surface Mount
- Height :
- 2.3mm
- Max Collector Current :
- 5A
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Datasheets
- KSH210TF
KSH210TF Documents
PNP 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH210TF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 45 @ 2A 1V.With a collector emitter saturation voltage of -1.8V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1A, 5A.If the emitter base voltage is kept at -8V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.A transition frequency of 65MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 5A volts at its maximum.
KSH210TF Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of -1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
KSH210TF Applications
There are a lot of ON Semiconductor
KSH210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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