KSH210TM
- Mfr.Part #
- KSH210TM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A DPAK
- Stock
- 6,747
- In Stock :
- 6,747
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Transition Frequency :
- 65MHz
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- -8V
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.4W
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 25V
- Terminal Position :
- Single
- Max Collector Current :
- 5A
- Pbfree Code :
- yes
- Frequency - Transition :
- 65MHz
- Transistor Type :
- PNP
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 6 Weeks
- Number of Terminations :
- 2
- Collector Emitter Breakdown Voltage :
- 25V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2002
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- KSH210
- Power - Max :
- 1.4W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -40V
- Weight :
- 260.37mg
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- HTS Code :
- 8541.29.00.95
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- hFE Min :
- 45
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 1.8V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Datasheets
- KSH210TM
KSH210TM Documents

PNP 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH210TM Overview
DC current gain in this device equals 45 @ 2A 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.8V @ 1A, 5A.An emitter's base voltage can be kept at -8V to gain high efficiency.As a result, the part has a transition frequency of 65MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 5A volts.
KSH210TM Features
the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
a transition frequency of 65MHz
KSH210TM Applications
There are a lot of ON Semiconductor
KSH210TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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