KSH122TM
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- Mfr.Part #
- KSH122TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A DPAK
- Stock
- 10,374
- In Stock ：
- 10,374
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN - Darlington
- Voltage - Rated DC :
- 100V
- Element Configuration :
- Single
- Polarity :
- NPN
- hFE Min :
- 1000
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Voltage (VCEO) :
- 100V
- Terminal Form :
- Gull wing
- Weight :
- 260.37mg
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10μA
- Current Rating :
- 8A
- Published :
- 2011
- Number of Elements :
- 1
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 2V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- JEDEC-95 Code :
- TO-252AA
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Max Collector Current :
- 8A
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Max Power Dissipation :
- 1.75W
- JESD-30 Code :
- R-PSSO-G2
- Base Part Number :
- KSH122
- Datasheets
- KSH122TM
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NPN - Darlington 150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH122TM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 4A 4V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 80mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 8A volts at its maximum.
KSH122TM Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
KSH122TM Applications
There are a lot of ON Semiconductor
KSH122TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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