KSC945CYTA
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- Mfr.Part #
- KSC945CYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 27,795
- In Stock ：
- 27,795
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 150mA
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Base Part Number :
- KSC945
- Width :
- 3.86mm
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 300MHz
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 250mW
- Collector Base Voltage (VCBO) :
- 60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Voltage - Rated DC :
- 50V
- Max Breakdown Voltage :
- 50V
- Factory Lead Time :
- 12 Weeks
- Current Rating :
- 150mA
- Lead Free :
- Lead Free
- Height :
- 4.58mm
- hFE Min :
- 40
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 50V
- Published :
- 2002
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Frequency :
- 300MHz
- Length :
- 4.58mm
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Weight :
- 240mg
- Collector Emitter Saturation Voltage :
- 150mV
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 50V
- Transition Frequency :
- 300MHz
- Operating Temperature :
- 150°C TJ
- Datasheets
- KSC945CYTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC945CYTA Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
KSC945CYTA Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945CYTA Applications
There are a lot of ON Semiconductor
KSC945CYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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