KSC945CGBU
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- Mfr.Part #
- KSC945CGBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 56,869
- In Stock ：
- 56,869
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Max Collector Current :
- 150mA
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Width :
- 3.86mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Max Power Dissipation :
- 250mW
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Frequency :
- 300MHz
- Number of Elements :
- 1
- Length :
- 4.58mm
- Packaging :
- Bulk
- Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 50V
- Weight :
- 179mg
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 300MHz
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 50V
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- hFE Min :
- 40
- Current Rating :
- 150mA
- Collector Emitter Saturation Voltage :
- 150mV
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Height :
- 4.58mm
- Lead Free :
- Lead Free
- Transition Frequency :
- 300MHz
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Element Material :
- SILICON
- Base Part Number :
- KSC945
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Published :
- 2002
- Element Configuration :
- Single
- Datasheets
- KSC945CGBU
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC945CGBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 150mA.A transition frequency of 300MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
KSC945CGBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945CGBU Applications
There are a lot of ON Semiconductor
KSC945CGBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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