KSC2690AYSTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

6 Weeks

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

hFE Min :

60

Power Dissipation :

1.2W

Published :

2000

Length :

8mm

JESD-609 Code :

e3

Number of Pins :

3

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 300mA 5V

Gain Bandwidth Product :

155MHz

Max Power Dissipation :

1.2W

Base Part Number :

KSC2690A

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Width :

3.25mm

Max Collector Current :

1.2A

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Collector Emitter Breakdown Voltage :

160V

Collector Emitter Voltage (VCEO) :

160V

Collector Emitter Saturation Voltage :

400mV

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

700mV @ 200mA, 1A

Frequency :

155MHz

Voltage - Rated DC :

160V

Current Rating :

1.2A

Pbfree Code :

yes

Packaging :

Tube

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

160V

Current - Collector Cutoff (Max) :

1μA ICBO

Terminal Finish :

Tin (Sn)

Height :

11mm

Lead Free :

Lead Free

Package / Case :

TO-225AA, TO-126-3

Transition Frequency :

155MHz

Mount :

Through Hole

Number of Terminations :

3

Weight :

761mg

Transistor Type :

NPN

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mounting Type :

Through Hole