KSC2328AYTA
- Mfr.Part #
- KSC2328AYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 2A TO92-3
- Stock
- 6,045
- In Stock :
- 6,045
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1W
- Frequency :
- 120MHz
- Mounting Type :
- Through Hole
- hFE Min :
- 100
- Lead Free :
- Lead Free
- Current Rating :
- 2A
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Base Part Number :
- KSC2328A
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 30V
- Max Power Dissipation :
- 1W
- Weight :
- 371.1027mg
- Voltage - Rated DC :
- 30V
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 2V
- Collector Emitter Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2002
- Collector Emitter Voltage (VCEO) :
- 30V
- Gain Bandwidth Product :
- 120MHz
- Pbfree Code :
- yes
- Length :
- 4.9mm
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 120MHz
- Max Collector Current :
- 2A
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Height :
- 8mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Width :
- 3.9mm
- Packaging :
- Tape and Box (TB)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 30mA, 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 500mA 2V
- Max Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Transistor Application :
- AMPLIFIER
- Datasheets
- KSC2328AYTA

NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2328AYTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 30mA, 1.5A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 120MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
KSC2328AYTA Features
the DC current gain for this device is 160 @ 500mA 2V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 120MHz
KSC2328AYTA Applications
There are a lot of ON Semiconductor
KSC2328AYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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