KSA916YTA
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- Mfr.Part #
- KSA916YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.8A TO92-3
- Stock
- 35
- In Stock ：
- 35
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Max Collector Current :
- 800mA
- Collector Emitter Saturation Voltage :
- -1V
- Number of Elements :
- 1
- Current Rating :
- -800mA
- Emitter Base Voltage (VEBO) :
- -5V
- Length :
- 4.9mm
- hFE Min :
- 80
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Frequency :
- 120MHz
- Max Power Dissipation :
- 900mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 120MHz
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 120V
- Weight :
- 371.1027mg
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Height :
- 8mm
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- -120V
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Width :
- 3.9mm
- Power Dissipation :
- 900mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 120V
- Voltage - Rated DC :
- -120V
- Published :
- 2017
- Max Breakdown Voltage :
- 120V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Factory Lead Time :
- 6 Weeks
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Base Part Number :
- KSA916
- Gain Bandwidth Product :
- 120MHz
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- Datasheets
- KSA916YTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSA916YTA Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1V.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 120V volts can be used.A maximum collector current of 800mA volts is possible.
KSA916YTA Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 120MHz
KSA916YTA Applications
There are a lot of ON Semiconductor
KSA916YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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