KSA928AYTA
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- Mfr.Part #
- KSA928AYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 2A TO92-3
- Stock
- 1,391
- In Stock ：
- 1,391
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 30V
- Length :
- 4.9mm
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Current Rating :
- -2A
- Gain Bandwidth Product :
- 120MHz
- Weight :
- 371.1027mg
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 30mA, 1.5A
- Width :
- 3.9mm
- Published :
- 2017
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- hFE Min :
- 100
- Emitter Base Voltage (VEBO) :
- -5V
- Voltage - Rated DC :
- -30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 120MHz
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Base Part Number :
- KSA928
- Collector Base Voltage (VCBO) :
- -30V
- Collector Emitter Saturation Voltage :
- -2V
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 500mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 8mm
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 120MHz
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 6 Weeks
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Power Dissipation :
- 1W
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Emitter Breakdown Voltage :
- 30V
- Max Power Dissipation :
- 1W
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 2A
- Datasheets
- KSA928AYTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSA928AYTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 30mA, 1.5A.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 120MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
KSA928AYTA Features
the DC current gain for this device is 160 @ 500mA 2V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 30mA, 1.5A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 120MHz
KSA928AYTA Applications
There are a lot of ON Semiconductor
KSA928AYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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