KSA1015GRTA
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- Mfr.Part #
- KSA1015GRTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 50V
- Max Collector Current :
- 150mA
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Length :
- 5.2mm
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Weight :
- 240mg
- Mounting Type :
- Through Hole
- Published :
- 2007
- hFE Min :
- 70
- Number of Pins :
- 3
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 50V
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 50V
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Height :
- 5.33mm
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 400mW
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Lifecycle Status :
- LIFETIME (Last Updated: 18 hours ago)
- Gain Bandwidth Product :
- 80MHz
- Base Part Number :
- KSA1015
- Collector Emitter Saturation Voltage :
- -300mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 4.19mm
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- -50V
- Emitter Base Voltage (VEBO) :
- -5V
- Voltage - Rated DC :
- -50V
- Number of Elements :
- 1
- Frequency :
- 80MHz
- Transition Frequency :
- 80MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 400mW
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Current Rating :
- -150mA
- Datasheets
- KSA1015GRTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA1015GRTA Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
KSA1015GRTA Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 80MHz
KSA1015GRTA Applications
There are a lot of ON Semiconductor
KSA1015GRTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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