KSA1015GRTA
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- Mfr.Part #
- KSA1015GRTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 50V
- Length :
- 5.2mm
- Frequency :
- 80MHz
- Lead Free :
- Lead Free
- hFE Min :
- 70
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 80MHz
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Width :
- 4.19mm
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -300mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 6 Weeks
- Emitter Base Voltage (VEBO) :
- -5V
- Current Rating :
- -150mA
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Element Configuration :
- Single
- Power Dissipation :
- 400mW
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Number of Terminations :
- 3
- Published :
- 2007
- Pbfree Code :
- yes
- Packaging :
- Tape and Box (TB)
- Height :
- 5.33mm
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Weight :
- 240mg
- Voltage - Rated DC :
- -50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Base Voltage (VCBO) :
- -50V
- Max Collector Current :
- 150mA
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 50V
- Lifecycle Status :
- LIFETIME (Last Updated: 18 hours ago)
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- KSA1015
- Number of Elements :
- 1
- Max Power Dissipation :
- 400mW
- Transition Frequency :
- 80MHz
- Datasheets
- KSA1015GRTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA1015GRTA Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
KSA1015GRTA Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 80MHz
KSA1015GRTA Applications
There are a lot of ON Semiconductor
KSA1015GRTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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