KSA1013YTA
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- Mfr.Part #
- KSA1013YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 160V 1A TO92-3
- Stock
- 28,224
- In Stock ：
- 28,224
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -1A
- JESD-609 Code :
- e3
- Width :
- 4.1mm
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 160V
- Max Power Dissipation :
- 900mW
- Transistor Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Frequency :
- 50MHz
- Length :
- 5.1mm
- Collector Base Voltage (VCBO) :
- -160V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 50MHz
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Breakdown Voltage :
- 160V
- hFE Min :
- 60
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Height :
- 8.2mm
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- Base Part Number :
- KSA1013
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Number of Pins :
- 3
- Published :
- 2013
- Power Dissipation :
- 900mW
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Voltage - Rated DC :
- -160V
- Transistor Application :
- AMPLIFIER
- Mount :
- Through Hole
- Transition Frequency :
- 50MHz
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- -1.5V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 200mA 5V
- Mounting Type :
- Through Hole
- Weight :
- 371.1027mg
- Packaging :
- Tape and Box (TB)
- Emitter Base Voltage (VEBO) :
- -6V
- Datasheets
- KSA1013YTA
KSA1013YTA Documents
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSA1013YTA Overview
This device has a DC current gain of 160 @ 200mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.5V.A VCE saturation (Max) of 1.5V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1A volts is possible.
KSA1013YTA Features
the DC current gain for this device is 160 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013YTA Applications
There are a lot of ON Semiconductor
KSA1013YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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