JAN2N7370
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- Mfr.Part #
- JAN2N7370
- Manufacturer
- Microchip Technology
- Package / Case
- TO-254-3, TO-254AA (Straight Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO254AA
- Stock
- 5,435
- In Stock ：
- 5,435
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Case Connection :
- Isolated
- Pin Count :
- 3
- Qualification Status :
- Qualified
- Terminal Form :
- PIN/PEG
- JESD-609 Code :
- e0
- Transistor Type :
- NPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Pbfree Code :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Power - Max :
- 100W
- Current - Collector Cutoff (Max) :
- 1mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-254-3, TO-254AA (Straight Leads)
- Number of Terminations :
- 3
- Current - Collector (Ic) (Max) :
- 12A
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Polarity :
- NPN
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~200°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- S-MSFM-P3
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 3V
- Transistor Element Material :
- SILICON
- Series :
- Military, MIL-PRF-19500/624
- Published :
- 2007
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Datasheets
- JAN2N7370
NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON TO-254-3, TO-254AA (Straight Leads) Bulk Through Hole
JAN2N7370 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 6A 3V DC current gain.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.
JAN2N7370 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JAN2N7370 Applications
There are a lot of Microsemi Corporation
JAN2N7370 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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