JAN2N718A
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- Mfr.Part #
- JAN2N718A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO18
- Stock
- 28,335
- In Stock ：
- 28,335
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Qualified
- Terminal Position :
- BOTTOM
- Published :
- 2007
- Pin Count :
- 3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 500mW
- Collector Base Voltage (VCBO) :
- 75V
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Pbfree Code :
- No
- Max Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Terminal Form :
- Wire
- Collector Emitter Voltage (VCEO) :
- 30V
- Packaging :
- Bulk
- Max Collector Current :
- 500mA
- Series :
- Military, MIL-PRF-19500/181
- Emitter Base Voltage (VEBO) :
- 7V
- Mount :
- Through Hole
- Configuration :
- Single
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C~200°C TJ
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- ECCN Code :
- EAR99
- Datasheets
- JAN2N718A
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N718A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 15mA, 150mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.During maximum operation, collector current can be as low as 500mA volts.
JAN2N718A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N718A Applications
There are a lot of Microsemi Corporation
JAN2N718A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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