JAN2N6352

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN - Darlington

ESR (Equivalent Series Resistance) :

200 Ohms

Radiation Hardening :

No

Series :

SXT214

Packaging :

Bulk

Power - Max :

2 W

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 5mA, 5A

Operating Mode :

Fundamental

Type :

MHz Crystal

Load Capacitance :

10pF

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 5A, 5V

Supplier Device Package :

TO-66 (TO-213AA)

Frequency Tolerance :

±20ppm

Max Operating Temperature :

125 °C

Number of Elements :

1

Collector Base Voltage (VCBO) :

80 V

Collector Emitter Voltage (VCEO) :

80 V

Height - Seated (Max) :

0.020 (0.50mm)

Element Configuration :

Single

Product Status :

Active

Min Operating Temperature :

-55 °C

Collector Emitter Saturation Voltage :

1.5 V

Package :

Bulk

RoHS :

Non-Compliant

Mount :

Through Hole

Polarity :

NPN

Emitter Base Voltage (VEBO) :

12 V

Current - Collector (Ic) (Max) :

5 A

Voltage - Collector Emitter Breakdown (Max) :

80 V

Current - Collector Cutoff (Max) :

-

Frequency Stability :

±30ppm

Size / Dimension :

0.079 L x 0.063 W (2.00mm x 1.60mm)

Frequency :

20 MHz

Operating Temperature :

-20°C ~ 70°C

Number of Pins :

4

Package / Case :

4-SMD, No Lead

Mounting Type :

Surface Mount

Lifecycle Status :

Production (Last Updated: 2 months ago)

Frequency - Transition :

-