JAN2N6350
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- Mfr.Part #
- JAN2N6350
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AC, TO-33-4 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 5A TO33
- Stock
- 10,415
- In Stock ：
- 10,415
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time-Max (ton) :
- 500ns
- Terminal Form :
- Wire
- Operating Temperature :
- -65°C~200°C TJ
- Case Connection :
- COLLECTOR
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.5V
- Transistor Type :
- NPN - Darlington
- Radiation Hardening :
- No
- Number of Terminations :
- 4
- Pbfree Code :
- No
- Current - Collector (Ic) (Max) :
- 5A
- Factory Lead Time :
- 36 Weeks
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Mount :
- Through Hole
- Pin Count :
- 4
- Number of Elements :
- 1
- Element Configuration :
- Single
- Published :
- 2002
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 4
- Emitter Base Voltage (VEBO) :
- 12V
- Power - Max :
- 1W
- JESD-609 Code :
- e0
- Series :
- Military, MIL-PRF-19500/472
- Polarity :
- NPN
- Qualification Status :
- Qualified
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 5A 5V
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 5mA, 5A
- Package / Case :
- TO-205AC, TO-33-4 Metal Can
- Datasheets
- JAN2N6350
NPN - Darlington -65°C~200°C TJ 1 Elements 4 Terminations SILICON TO-205AC, TO-33-4 Metal Can Bulk Through Hole
JAN2N6350 Overview
In this device, the DC current gain is 2000 @ 5A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 5mA, 5A.With the emitter base voltage set at 12V, an efficient operation can be achieved.
JAN2N6350 Features
the DC current gain for this device is 2000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 5mA, 5A
the emitter base voltage is kept at 12V
JAN2N6350 Applications
There are a lot of Microsemi Corporation
JAN2N6350 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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