JAN2N6284
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- Mfr.Part #
- JAN2N6284
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 20A TO3
- Stock
- 10,342
- In Stock ：
- 10,342
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Power - Max :
- 175W
- Package / Case :
- TO-3
- JESD-30 Code :
- O-MBFM-P2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- BOTTOM
- Contact Plating :
- Lead, Tin
- Collector Base Voltage (VCBO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Terminations :
- 2
- Transistor Type :
- NPN - Darlington
- Current - Collector (Ic) (Max) :
- 20A
- Polarity :
- NPN
- Factory Lead Time :
- 22 Weeks
- Collector Emitter Voltage (VCEO) :
- 100V
- Pbfree Code :
- No
- Operating Temperature :
- -65°C~200°C TJ
- Pin Count :
- 2
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Emitter Saturation Voltage :
- 3V
- Series :
- Military, MIL-PRF-19500/504
- RoHS Status :
- Non-RoHS Compliant
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-204AA
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 200mA, 20A
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1250 @ 10A 3V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 4MHz
- Packaging :
- Bulk
- Published :
- 2007
- JESD-609 Code :
- e0
- Terminal Form :
- PIN/PEG
- Qualification Status :
- Qualified
- Emitter Base Voltage (VEBO) :
- 7V
- Case Connection :
- COLLECTOR
- Datasheets
- JAN2N6284
NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-3 Bulk Through Hole
JAN2N6284 Overview
In this device, the DC current gain is 1250 @ 10A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 200mA, 20A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.
JAN2N6284 Features
the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
JAN2N6284 Applications
There are a lot of Microsemi Corporation
JAN2N6284 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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