JAN2N6051
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- Mfr.Part #
- JAN2N6051
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 12A TO3
- Stock
- 3,891
- In Stock ：
- 3,891
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Qualification Status :
- Qualified
- Series :
- Military, MIL-PRF-19500/501
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pbfree Code :
- No
- Power - Max :
- 150W
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- ECCN Code :
- EAR99
- JESD-30 Code :
- O-MBFM-P2
- Collector Base Voltage (VCBO) :
- 80V
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Polarity :
- PNP
- Current - Collector (Ic) (Max) :
- 12A
- Transistor Type :
- PNP - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 3V
- Collector Emitter Voltage (VCEO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- PIN/PEG
- Contact Plating :
- Lead, Tin
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-3
- Packaging :
- Bulk
- Pin Count :
- 2
- Case Connection :
- COLLECTOR
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 1mA
- Datasheets
- JAN2N6051
PNP - Darlington -55°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-3 Bulk Through Hole
JAN2N6051 Overview
This device has a DC current gain of 1000 @ 6A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 3V.A VCE saturation (Max) of 3V @ 120mA, 12A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.
JAN2N6051 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JAN2N6051 Applications
There are a lot of Microsemi Corporation
JAN2N6051 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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