JAN2N5667
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- Mfr.Part #
- JAN2N5667
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 300V 5A TO5
- Stock
- 1,904
- In Stock ：
- 1,904
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- PIN/PEG
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.2W
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Pbfree Code :
- No
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Qualified
- Number of Terminations :
- 2
- JESD-609 Code :
- e0
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 300V
- Max Collector Current :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 5V
- Power Dissipation :
- 1.2W
- Collector Base Voltage (VCBO) :
- 400V
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Packaging :
- Bulk
- Operating Temperature :
- -65°C~200°C TJ
- JESD-30 Code :
- O-MBFM-P2
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Pin Count :
- 2
- Series :
- Military, MIL-PRF-19500/455
- Factory Lead Time :
- 22 Weeks
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Current - Collector Cutoff (Max) :
- 200nA
- Number of Pins :
- 3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 5A
- Terminal Position :
- BOTTOM
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- JAN2N5667
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N5667 Overview
This device has a DC current gain of 25 @ 1A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 5A volts.
JAN2N5667 Features
the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
the emitter base voltage is kept at 6V
JAN2N5667 Applications
There are a lot of Microsemi Corporation
JAN2N5667 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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