JAN2N5666S

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-30 Code :

O-MBFM-P2

Collector Emitter Voltage (VCEO) :

200V

Emitter Base Voltage (VEBO) :

6V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

JESD-609 Code :

e0

Transistor Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Collector Current :

5A

Power Dissipation :

1.2W

Published :

2007

Qualification Status :

Qualified

Vce Saturation (Max) @ Ib, Ic :

1V @ 5A, 1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Factory Lead Time :

22 Weeks

JEDEC-95 Code :

TO-5

Package / Case :

TO-205AD, TO-39-3 Metal Can

Reach Compliance Code :

not_compliant

Max Power Dissipation :

1.2W

Operating Temperature :

-65°C~200°C TJ

Number of Elements :

1

Contact Plating :

Lead, Tin

Current - Collector Cutoff (Max) :

200nA

Packaging :

Bulk

Pbfree Code :

No

Polarity/Channel Type :

NPN

Series :

Military, MIL-PRF-19500/455

Transistor Application :

SWITCHING

Number of Terminations :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 1A 5V

Pin Count :

2

Collector Base Voltage (VCBO) :

250V

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Terminal Form :

PIN/PEG

RoHS Status :

Non-RoHS Compliant

Number of Pins :

3

Transistor Element Material :

SILICON

Mount :

Through Hole

Mounting Type :

Through Hole