JAN2N5663
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- Mfr.Part #
- JAN2N5663
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 300V 2A TO5
- Stock
- 17,177
- In Stock ：
- 17,177
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Series :
- Military, MIL-PRF-19500/454
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Configuration :
- Single
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Factory Lead Time :
- 22 Weeks
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 300V
- Qualification Status :
- Qualified
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 500mA 5V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 1W
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 400V
- Power Dissipation :
- 1W
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 200nA
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 400mA, 2A
- Terminal Form :
- Wire
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~200°C TJ
- JESD-609 Code :
- e0
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 6V
- Turn On Time-Max (ton) :
- 250ns
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Max Collector Current :
- 2A
- Packaging :
- Bulk
- Number of Elements :
- 1
- Datasheets
- JAN2N5663
NPN -65°C~200°C TJ 200nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N5663 Overview
In this device, the DC current gain is 25 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 400mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
JAN2N5663 Features
the DC current gain for this device is 25 @ 500mA 5V
the vce saturation(Max) is 800mV @ 400mA, 2A
the emitter base voltage is kept at 6V
JAN2N5663 Applications
There are a lot of Microsemi Corporation
JAN2N5663 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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