JAN2N5582
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- Mfr.Part #
- JAN2N5582
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO46-3
- Stock
- 16,268
- In Stock ：
- 16,268
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~200°C TJ
- Packaging :
- Bulk
- Configuration :
- Single
- Max Power Dissipation :
- 500mW
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 23 Weeks
- Max Collector Current :
- 800mA
- HTS Code :
- 8541.21.00.95
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Qualification Status :
- Qualified
- Case Connection :
- COLLECTOR
- Pbfree Code :
- No
- Contact Plating :
- Lead, Tin
- Series :
- Military, MIL-PRF-19500/423
- Collector Base Voltage (VCBO) :
- 75V
- Reference Standard :
- MIL-19500/423E
- ECCN Code :
- EAR99
- Turn Off Time-Max (toff) :
- 300ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Published :
- 2002
- Mount :
- Through Hole
- JESD-609 Code :
- e0
- Terminal Position :
- BOTTOM
- RoHS Status :
- Non-RoHS Compliant
- Turn On Time-Max (ton) :
- 35ns
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- JESD-30 Code :
- O-MBCY-W3
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 1V
- Transistor Element Material :
- SILICON
- Power - Max :
- 500mW
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Pin Count :
- 3
- Datasheets
- JAN2N5582
NPN -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JAN2N5582 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Maximum collector currents can be below 800mA volts.
JAN2N5582 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N5582 Applications
There are a lot of Microsemi Corporation
JAN2N5582 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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