JAN2N5416S
- Mfr.Part #
- JAN2N5416S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 300V 1A TO39
- Stock
- 30,720
- In Stock :
- 30,720
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Published :
- 2007
- Qualification Status :
- Qualified
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Lead Free :
- Contains Lead
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- O-MBCY-W4
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 300V
- Reference Standard :
- MIL-19500/485H
- Configuration :
- Single
- Case Connection :
- COLLECTOR
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 750mW
- Series :
- Military, MIL-PRF-19500/485
- JESD-609 Code :
- e0
- Operating Temperature :
- -65°C~200°C TJ
- JEDEC-95 Code :
- TO-5
- Factory Lead Time :
- 22 Weeks
- Current - Collector (Ic) (Max) :
- 1A
- Mounting Type :
- Through Hole
- HTS Code :
- 8541.21.00.95
- Polarity/Channel Type :
- PNP
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 5mA, 50mA
- Turn On Time-Max (ton) :
- 1000ns
- Max Collector Current :
- 1A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Current - Collector Cutoff (Max) :
- 1mA
- Turn Off Time-Max (toff) :
- 10000ns
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Radiation Hardening :
- No
- Number of Terminations :
- 4
- Pin Count :
- 3
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 350V
- Terminal Form :
- Wire
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- Datasheets
- JAN2N5416S
PNP -65°C~200°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5416S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 5mA, 50mA.During maximum operation, collector current can be as low as 1A volts.
JAN2N5416S Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
JAN2N5416S Applications
There are a lot of Microsemi Corporation
JAN2N5416S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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