JAN2N5416S

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Mfr.Part #
JAN2N5416S
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS PNP 300V 1A TO39
Stock
30,720
In Stock :
30,720

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Bulk
Published :
2007
Qualification Status :
Qualified
ECCN Code :
EAR99
Number of Pins :
3
Lead Free :
Contains Lead
Transistor Element Material :
SILICON
JESD-30 Code :
O-MBCY-W4
Transistor Type :
PNP
Collector Emitter Voltage (VCEO) :
300V
Reference Standard :
MIL-19500/485H
Configuration :
Single
Case Connection :
COLLECTOR
RoHS Status :
Non-RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
750mW
Series :
Military, MIL-PRF-19500/485
JESD-609 Code :
e0
Operating Temperature :
-65°C~200°C TJ
JEDEC-95 Code :
TO-5
Factory Lead Time :
22 Weeks
Current - Collector (Ic) (Max) :
1A
Mounting Type :
Through Hole
HTS Code :
8541.21.00.95
Polarity/Channel Type :
PNP
Mount :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
2V @ 5mA, 50mA
Turn On Time-Max (ton) :
1000ns
Max Collector Current :
1A
Terminal Finish :
Tin/Lead (Sn/Pb)
Current - Collector Cutoff (Max) :
1mA
Turn Off Time-Max (toff) :
10000ns
Package / Case :
TO-205AD, TO-39-3 Metal Can
Radiation Hardening :
No
Number of Terminations :
4
Pin Count :
3
Pbfree Code :
No
Collector Base Voltage (VCBO) :
350V
Terminal Form :
Wire
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 10V
Terminal Position :
BOTTOM
Transistor Application :
SWITCHING
Datasheets
JAN2N5416S
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N5416S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, Package / Case:TO-205AD, TO-39-3 Metal Can, Number of Terminations:4, JAN2N5416S pinout, JAN2N5416S datasheet PDF, JAN2N5416S amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N5416S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C~200°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole

JAN2N5416S Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 5mA, 50mA.During maximum operation, collector current can be as low as 1A volts.

JAN2N5416S Features


the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA


JAN2N5416S Applications


There are a lot of Microsemi Corporation
JAN2N5416S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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