JAN2N5415

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Mfr.Part #
JAN2N5415
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS PNP 200V 1A TO5
Stock
1,463
In Stock :
1,463

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Terminal Form :
Wire
ECCN Code :
EAR99
Max Power Dissipation :
750mW
JESD-609 Code :
e0
Transistor Application :
SWITCHING
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
6V
Power Dissipation :
750mW
Series :
Military, MIL-PRF-19500/485
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Pbfree Code :
No
Factory Lead Time :
22 Weeks
Pin Count :
3
Packaging :
Bulk
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 10V
Mounting Type :
Through Hole
RoHS Status :
Non-RoHS Compliant
Vce Saturation (Max) @ Ib, Ic :
2V @ 5mA, 50mA
Terminal Position :
BOTTOM
Collector Base Voltage (VCBO) :
200V
Current - Collector Cutoff (Max) :
1mA
Transistor Type :
PNP
JESD-30 Code :
O-MBCY-W4
Package / Case :
TO-205AD, TO-39-3 Metal Can
Operating Temperature :
-65°C~200°C TJ
Number of Terminations :
4
JEDEC-95 Code :
TO-5
Configuration :
Single
Qualification Status :
Qualified
Collector Emitter Voltage (VCEO) :
200V
Published :
2002
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Max Collector Current :
1A
Number of Pins :
3
Terminal Finish :
Tin/Lead (Sn/Pb)
Number of Elements :
1
Radiation Hardening :
No
Datasheets
JAN2N5415
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N5415 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-205AD, TO-39-3 Metal Can, Operating Temperature:-65°C~200°C TJ, Number of Terminations:4, Number of Pins:3, JAN2N5415 pinout, JAN2N5415 datasheet PDF, JAN2N5415 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N5415 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C~200°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole

JAN2N5415S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 1A volts.

JAN2N5415S Features


the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V


JAN2N5415S Applications


There are a lot of Microsemi Corporation
JAN2N5415S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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