JAN2N5339
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- Mfr.Part #
- JAN2N5339
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 100V 5A TO39
- Stock
- 44,245
- In Stock ：
- 44,245
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Series :
- Military, MIL-PRF-19500/560
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Factory Lead Time :
- 22 Weeks
- Turn On Time-Max (ton) :
- 200ns
- Collector Base Voltage (VCBO) :
- 100V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 5A
- Published :
- 2007
- Number of Terminations :
- 3
- Terminal Form :
- Wire
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Turn Off Time-Max (toff) :
- 2200ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 5A
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2A 2V
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e0
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100μA
- Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Qualification Status :
- Qualified
- Transistor Type :
- NPN
- Datasheets
- JAN2N5339
NPN -65°C~200°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5339 Overview
In this device, the DC current gain is 60 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 500mA, 5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
JAN2N5339 Features
the DC current gain for this device is 60 @ 2A 2V
the vce saturation(Max) is 1.2V @ 500mA, 5A
the emitter base voltage is kept at 6V
JAN2N5339 Applications
There are a lot of Microsemi Corporation
JAN2N5339 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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