JAN2N5237
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- Mfr.Part #
- JAN2N5237
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 120V 10A TO5
- Stock
- 47,438
- In Stock ：
- 47,438
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 10A
- Packaging :
- Bulk
- Turn On Time-Max (ton) :
- 550ns
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5A 5V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 10μA
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Series :
- Military, MIL-PRF-19500/394
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e0
- Mount :
- Through Hole
- Pbfree Code :
- No
- Power Dissipation :
- 1W
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Collector Emitter Voltage (VCEO) :
- 120V
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 1A, 10A
- Published :
- 2007
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 1W
- Pin Count :
- 2
- Qualification Status :
- Qualified
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- Factory Lead Time :
- 22 Weeks
- Emitter Base Voltage (VEBO) :
- 10V
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Turn Off Time-Max (toff) :
- 2000ns
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Datasheets
- JAN2N5237
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N5237 Overview
This device has a DC current gain of 40 @ 5A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 2.5V @ 1A, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.A maximum collector current of 10A volts is possible.
JAN2N5237 Features
the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
JAN2N5237 Applications
There are a lot of Microsemi Corporation
JAN2N5237 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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