JAN2N5151
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- Mfr.Part #
- JAN2N5151
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 2A TO39
- Stock
- 10,865
- In Stock ：
- 10,865
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Qualification Status :
- Qualified
- Radiation Hardening :
- No
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pin Count :
- 4
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1W
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e0
- Max Collector Current :
- 2A
- Factory Lead Time :
- 22 Weeks
- RoHS Status :
- Non-RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 5.5V
- Turn On Time-Max (ton) :
- 500ns
- Published :
- 2007
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max) :
- 50μA
- Series :
- Military, MIL-PRF-19500/545
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A 5V
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Terminal Form :
- Wire
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1W
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Transition Frequency :
- 60MHz
- Number of Pins :
- 3
- Datasheets
- JAN2N5151
PNP -65°C~200°C TJ 50μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5151 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 2.5A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5.5V.Parts of this part have transition frequencies of 60MHz.During maximum operation, collector current can be as low as 2A volts.
JAN2N5151 Features
the DC current gain for this device is 30 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
a transition frequency of 60MHz
JAN2N5151 Applications
There are a lot of Microsemi Corporation
JAN2N5151 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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