JAN2N5038
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- Mfr.Part #
- JAN2N5038
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 20A TO3
- Stock
- 48,442
- In Stock ：
- 48,442
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- JESD-30 Code :
- O-MBFM-P2
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 150V
- Operating Temperature :
- -65°C~200°C TJ
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Max Collector Current :
- 20A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-204AA, TO-3
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.2A, 12A
- Number of Elements :
- 1
- Power Dissipation :
- 140W
- Mounting Type :
- Through Hole
- Series :
- Military, MIL-PRF-19500/439
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA
- Polarity/Channel Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Max Power Dissipation :
- 140W
- ECCN Code :
- EAR99
- Terminal Form :
- PIN/PEG
- Qualification Status :
- Qualified
- Factory Lead Time :
- 20 Weeks
- Case Connection :
- COLLECTOR
- Pin Count :
- 2
- JESD-609 Code :
- e0
- Packaging :
- Bulk
- Number of Terminations :
- 2
- Pbfree Code :
- No
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 90V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 2A 5V
- Radiation Hardening :
- No
- Published :
- 2002
- Datasheets
- JAN2N5038
NPN -65°C~200°C TJ 1μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Bulk Through Hole
JAN2N5038 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 2A 5V.When VCE saturation is 1V @ 1.2A, 12A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.A maximum collector current of 20A volts can be achieved.
JAN2N5038 Features
the DC current gain for this device is 50 @ 2A 5V
the vce saturation(Max) is 1V @ 1.2A, 12A
the emitter base voltage is kept at 7V
JAN2N5038 Applications
There are a lot of Microsemi Corporation
JAN2N5038 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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