JAN2N5013S
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- Mfr.Part #
- JAN2N5013S
- Manufacturer
- Microsemi
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 800V 0.2A TO39
- Stock
- 38,195
- In Stock ：
- 38,195
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- Series :
- Military, MIL-PRF-19500/727
- Voltage - Collector Emitter Breakdown (Max) :
- 800V
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Supplier Device Package :
- TO-39 (TO-205AD)
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Published :
- 2007
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector (Ic) (Max) :
- 200mA
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 20mA 10V
- Power - Max :
- 1W
- Datasheets
- JAN2N5013S
NPN -65°C~200°C TJ 10nA ICBO TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5013S Overview
DC current gain in this device equals 30 @ 20mA 10V, which is the ratio of the base current to the collector current.Product comes in TO-39 (TO-205AD) supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
JAN2N5013S Features
the DC current gain for this device is 30 @ 20mA 10V
the supplier device package of TO-39 (TO-205AD)
JAN2N5013S Applications
There are a lot of Microsemi Corporation
JAN2N5013S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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