JAN2N4236
- Mfr.Part #
- JAN2N4236
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO39
- Stock
- 48,798
- In Stock :
- 48,798
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- Configuration :
- Single
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 80V
- Mount :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Pins :
- 3
- Terminal Form :
- Wire
- Pbfree Code :
- No
- Series :
- Military, MIL-PRF-19500/580
- Factory Lead Time :
- 22 Weeks
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Emitter Base Voltage (VEBO) :
- 7V
- Polarity :
- NPN
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- JESD-609 Code :
- e0
- Max Power Dissipation :
- 1W
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 1mA
- Datasheets
- JAN2N4236
PNP -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N4236 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 250mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.During maximum operation, collector current can be as low as 1A volts.
JAN2N4236 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
JAN2N4236 Applications
There are a lot of Microsemi Corporation
JAN2N4236 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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