JAN2N4234
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- Mfr.Part #
- JAN2N4234
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO39
- Stock
- 3,358
- In Stock ：
- 3,358
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Base Voltage (VCBO) :
- 40V
- Factory Lead Time :
- 22 Weeks
- Mount :
- Through Hole
- Series :
- Military, MIL-PRF-19500/580
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Packaging :
- Bulk
- Terminal Form :
- Wire
- Polarity :
- NPN
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Qualified
- Published :
- 2007
- Configuration :
- Single
- Number of Terminations :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Power Dissipation :
- 1W
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 40V
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- Terminal Position :
- BOTTOM
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 1A
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Current - Collector Cutoff (Max) :
- 1mA
- Datasheets
- JAN2N4234
PNP -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N4234 Overview
In this device, the DC current gain is 30 @ 250mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N4234 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
JAN2N4234 Applications
There are a lot of Microsemi Corporation
JAN2N4234 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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